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AUIRGP50B60PD1

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AUIRGP50B60PD1 Image

The AUIRGP50B60PD1 from Infineon Technologies is a IGBT with Gate Emitter Voltage -30 to 30 V, Saturated Collector Emitter Voltage 2 to 3.60 V, DC Collector Current 45 to 75 A, DC Forward Current 15 to 60 A, Junction Temperature -55 to 150 Degree C. More details for AUIRGP50B60PD1 can be seen below.

Product Specifications

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Product Details

  • Part Number
    AUIRGP50B60PD1
  • Manufacturer
    Infineon Technologies
  • Description
    600 V, Single Switch IGBT Module

General

  • Types
    Single Switch IGBT
  • No. of Transistors
    Single
  • Gate Emitter Voltage
    -30 to 30 V
  • Saturated Collector Emitter Voltage
    2 to 3.60 V
  • DC Collector Current
    45 to 75 A
  • DC Forward Current
    15 to 60 A
  • Junction Temperature
    -55 to 150 Degree C
  • Gate Emitter Leakage Current
    0.1 uA
  • Collector Emitter Voltage
    600 V
  • Power Dissipation
    166 to 390 W
  • Package
    TO247COPAK
  • Package Type
    Through Hole
  • Applications
    Automotive HEV and EV, PFC and ZVS SMPS Circuits
  • RoHS Compliant
    Yes

Technical Documents
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