1. everything PE
  2. Power Electronics
  3. Power Transistors
  4. IGBTs
  5. Fuji Electric
  6. FGW50XS65C

FGW50XS65C

Download Datasheet Request Quote

Note : Your request will be directed to Fuji Electric.

FGW50XS65C Image

The FGW50XS65C from Fuji Electric is a IGBT with Gate Emitter Voltage -20 to 20 V, Saturated Collector Emitter Voltage 1.35 to 1.7 V, DC Collector Current 50 to 77 A, DC Forward Current 50 to 80 A, Junction Temperature -40 to 175 Degree C. More details for FGW50XS65C can be seen below.

Product Specifications

View similar products

Product Details

  • Part Number
    FGW50XS65C
  • Manufacturer
    Fuji Electric
  • Description
    650 V, Field Stop Trench IGBT Module

General

  • Types
    Field Stop Trench IGBT
  • No. of Transistors
    Single
  • Gate Emitter Voltage
    -20 to 20 V
  • Saturated Collector Emitter Voltage
    1.35 to 1.7 V
  • DC Collector Current
    50 to 77 A
  • DC Forward Current
    50 to 80 A
  • Junction Temperature
    -40 to 175 Degree C
  • Gate Emitter Leakage Current
    2 uA
  • Collector Emitter Voltage
    650 V
  • Power Dissipation
    216 to 290 W
  • Package
    TO247
  • Package Type
    Through Hole
  • Applications
    Inverter, Welding matchines, Uniterruptible power supply, PV Power Conditioner
  • RoHS Compliant
    Yes

Technical Documents
View details on the manufacturer's website
View similar products

Latest IGBTs

View more products