Note : Your request will be directed to Hitachi.
The MBN1200F33F from Hitachi is a IGBT with Saturated Collector Emitter Voltage 2.85 V, DC Collector Current 1200 A, Collector Emitter Voltage 3300 V. More details for MBN1200F33F can be seen below.
650 V Insulated Gate Bipolar Transistor
1200 V IGBT Power Module
650 V Field-Stop Trench IGBT
You can now find similar products from multiple companies on everything RF.
Our Newsletter will keep you up to date with the Power Electronics Industry.
By signing up for our newsletter you agree to our Terms of Service and acknowledge receipt of our Privacy Policy.
Create an account on everything PE to get a range of benefits.
By creating an account with us you agree to our Terms of Service and acknowledge receipt of our Privacy Policy.
Login to everything PE to download datasheets, white papers and more content.
Fill the form to Download the Media Kit.
Fill the form to Download the Media Kit
Processing...Please wait.
