Note : Your request will be directed to Hitachi.
The MBN3600E17F from Hitachi is a IGBT with Saturated Collector Emitter Voltage 2.4 V, DC Collector Current 3600 A, Collector Emitter Voltage 1700 V. More details for MBN3600E17F can be seen below.
650 V Insulated Gate Bipolar Transistor
1200 V IGBT Power Module
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