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AIGW40N65H5

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The AIGW40N65H5 from Infineon Technologies is a IGBT with Gate Emitter Voltage -30 to 30 V, Saturated Collector Emitter Voltage 1.66 to 2.10 V, DC Collector Current 46 to 74 V, Peak Collector Current 74 to 46 A, Junction Temperature 175 Degree C. More details for AIGW40N65H5 can be seen below.

Product Specifications

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Product Details

  • Part Number
    AIGW40N65H5
  • Manufacturer
    Infineon Technologies
  • Description
    650 V ,Single Switch IGBT Module

General

  • Types
    Single Switch IGBT
  • No. of Transistors
    Single
  • Gate Emitter Voltage
    -30 to 30 V
  • Saturated Collector Emitter Voltage
    1.66 to 2.10 V
  • DC Collector Current
    46 to 74 V
  • Peak Collector Current
    74 to 46 A
  • Junction Temperature
    175 Degree C
  • Gate Emitter Leakage Current
    0.1 uA
  • Operating Temperature
    -40 to 175 Degree C
  • Collector Emitter Voltage
    650 V
  • Power Dissipation
    125 to 250 W
  • Package
    PG-TO247-3
  • Package Type
    Through Hole
  • Applications
    Off-board charger, On-board charger, DC/Dc converter, Power-Factor correction
  • RoHS Compliant
    Yes

Technical Documents
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