The AIKB30N65DH5 from Infineon Technologies is an Automotive-Qualified Field Stop Trench IGBT. It has a collector-emitter breakdown voltage of over 650 V, collector-emitter saturation voltage of 1.95 V, and a gate-emitter threshold voltage of 4.0 V. This IGBT has a DC collector current of up to 55 A, peak collector current of less than 90 A, and a gate-emitter leakage current of less than 100 nA. It utilizes high-speed H5 technology and has a power dissipation of up to 188 W. This AEC-Q101 qualified IGBT is stress tested under dynamic conditions and offers the best-in-class efficiency with hard switching and resonant topologies.

This RoHS compliant IGBT is available as a surface mount package that measures 9.8 x 8.51 mm and is ideal for use in off-board chargers, on-board chargers, DC/DC converters, and power-factor correction applications.