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AIKW30N60CT

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AIKW30N60CT Image

The AIKW30N60CT from Infineon Technologies is a IGBT with Gate Emitter Voltage -20 to 20 V, Saturated Collector Emitter Voltage 1.50 to 2.05 V, DC Collector Current 30 to 60 V, Peak Collector Current 30 to 60 A, DC Forward Current 30 to 60 A. More details for AIKW30N60CT can be seen below.

Product Specifications

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Product Details

  • Part Number
    AIKW30N60CT
  • Manufacturer
    Infineon Technologies
  • Description
    600 V ,Single Switch IGBT Module

General

  • Types
    Single Switch IGBT
  • No. of Transistors
    Single
  • Gate Emitter Voltage
    -20 to 20 V
  • Saturated Collector Emitter Voltage
    1.50 to 2.05 V
  • DC Collector Current
    30 to 60 V
  • Peak Collector Current
    30 to 60 A
  • DC Forward Current
    30 to 60 A
  • Junction Temperature
    175 Degree C
  • Gate Emitter Leakage Current
    0.1 uA
  • Operating Temperature
    -40 to 175 Degree C
  • Collector Emitter Voltage
    600 V
  • Power Dissipation
    187 W
  • Package
    TO-247
  • Package Type
    Through Hole
  • Applications
    Main inverter, Climate compressor, PTC heater, Motor drives
  • RoHS Compliant
    Yes

Technical Documents
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