AUIRG4BC30S-S

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AUIRG4BC30S-S Image

The AUIRG4BC30S-S from Infineon Technologies is a IGBT with Gate Emitter Voltage -20 to 20 V, Saturated Collector Emitter Voltage 1.4 to 1.6 V, DC Collector Current 18 to 34 A, Junction Temperature -40 to 175 Degree C, Gate Emitter Leakage Current 0.1 uA. More details for AUIRG4BC30S-S can be seen below.

Product Specifications

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Product Details

  • Part Number
    AUIRG4BC30S-S
  • Manufacturer
    Infineon Technologies
  • Description
    600 V, Single Switch IGBT Module

General

  • Types
    Single Switch IGBT
  • No. of Transistors
    Single
  • Gate Emitter Voltage
    -20 to 20 V
  • Saturated Collector Emitter Voltage
    1.4 to 1.6 V
  • DC Collector Current
    18 to 34 A
  • Junction Temperature
    -40 to 175 Degree C
  • Gate Emitter Leakage Current
    0.1 uA
  • Collector Emitter Voltage
    600 V
  • Power Dissipation
    42 to 100 W
  • Package
    D2PAK
  • Package Type
    Through Hole
  • RoHS Compliant
    Yes

Technical Documents

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