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AUIRG4PC40S-E

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AUIRG4PC40S-E Image

The AUIRG4PC40S-E from Infineon Technologies is a IGBT with Gate Emitter Voltage -20 to 20 V, Saturated Collector Emitter Voltage 1.32 to 1.68 V, DC Collector Current 31 to 60 A, Junction Temperature 175 Degree C, Gate Emitter Leakage Current -0.1 to 0.1uA. More details for AUIRG4PC40S-E can be seen below.

Product Specifications

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Product Details

  • Part Number
    AUIRG4PC40S-E
  • Manufacturer
    Infineon Technologies
  • Description
    600 V ,Single Switch IGBT Module

General

  • Types
    Single Switch IGBT
  • No. of Transistors
    Single
  • Gate Emitter Voltage
    -20 to 20 V
  • Saturated Collector Emitter Voltage
    1.32 to 1.68 V
  • DC Collector Current
    31 to 60 A
  • Junction Temperature
    175 Degree C
  • Gate Emitter Leakage Current
    -0.1 to 0.1uA
  • Operating Temperature
    -55 to 150 Degree C
  • Collector Emitter Voltage
    600 V
  • Power Dissipation
    65 to 160 W
  • Package
    TO247
  • Package Type
    Through Hole
  • RoHS Compliant
    Yes

Technical Documents
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