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IKW30N60DTP

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IKW30N60DTP Image

The IKW30N60DTP from Infineon Technologies is a IGBT with Gate Emitter Voltage -20 to 20 V, Saturated Collector Emitter Voltage 1.60 to 1.94 V, DC Collector Current 38 to 53 A, DC Forward Current 24 to 39 A, Junction Temperature 175 Degree C. More details for IKW30N60DTP can be seen below.

Product Specifications

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Product Details

  • Part Number
    IKW30N60DTP
  • Manufacturer
    Infineon Technologies
  • Description
    600 V ,Single Switch IGBT Module

General

  • Types
    Single Switch IGBT
  • No. of Transistors
    Single
  • Gate Emitter Voltage
    -20 to 20 V
  • Saturated Collector Emitter Voltage
    1.60 to 1.94 V
  • DC Collector Current
    38 to 53 A
  • DC Forward Current
    24 to 39 A
  • Junction Temperature
    175 Degree C
  • Gate Emitter Leakage Current
    0.1 uA
  • Operating Temperature
    -40 to 175 Degree C
  • Collector Emitter Voltage
    600 V
  • Power Dissipation
    100 to 200 W
  • Package
    TO-247-3
  • Package Type
    Through Hole
  • Applications
    Drives, solar inverters, uninterruptible power supplies, converters with medium switching frequency
  • RoHS Compliant
    Yes

Technical Documents
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