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IKFW50N60ET

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The IKFW50N60ET from Infineon Technologies is a IGBT with Gate Emitter Voltage -30 to 30 V, Saturated Collector Emitter Voltage 1.50 to 2 V, DC Collector Current 64 A, DC Forward Current 60 to 80 A, Junction Temperature 175 Degree C. More details for IKFW50N60ET can be seen below.

Product Specifications

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Product Details

  • Part Number
    IKFW50N60ET
  • Manufacturer
    Infineon Technologies
  • Description
    600 V ,Single Switch IGBT Module

General

  • Types
    Single Switch IGBT
  • No. of Transistors
    Single
  • Gate Emitter Voltage
    -30 to 30 V
  • Saturated Collector Emitter Voltage
    1.50 to 2 V
  • DC Collector Current
    64 A
  • DC Forward Current
    60 to 80 A
  • Junction Temperature
    175 Degree C
  • Gate Emitter Leakage Current
    0.1 uA
  • Operating Temperature
    -40 to 175 Degree C
  • Collector Emitter Voltage
    600 V
  • Power Dissipation
    120 to 164 W
  • Package
    PG-TO247-3-AI
  • Package Type
    Through Hole
  • Applications
    General Purpose Drives(GPD), Servo Drives, Industrial UPS, Welding, Solar String Inverter
  • RoHS Compliant
    Yes

Technical Documents
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