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IHW30N160R5

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IHW30N160R5 Image

The IHW30N160R5 from Infineon Technologies is a IGBT with Gate Emitter Voltage -25 to 25 V, Saturated Collector Emitter Voltage 1.85 to 2.40 V, DC Collector Current 60 A, DC Forward Current 36 to 55 A, Junction Temperature 175 Degree C. More details for IHW30N160R5 can be seen below.

Product Specifications

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Product Details

  • Part Number
    IHW30N160R5
  • Manufacturer
    Infineon Technologies
  • Description
    1600 V ,Single Switch IGBT Module

General

  • Types
    Single Switch IGBT
  • No. of Transistors
    Single
  • Gate Emitter Voltage
    -25 to 25 V
  • Saturated Collector Emitter Voltage
    1.85 to 2.40 V
  • DC Collector Current
    60 A
  • DC Forward Current
    36 to 55 A
  • Junction Temperature
    175 Degree C
  • Gate Emitter Leakage Current
    0.1 uA
  • Operating Temperature
    -40 to 175 Degree C
  • Collector Emitter Voltage
    1600 V
  • Power Dissipation
    131.5 to 263 W
  • Package
    TO-247-3
  • Package Type
    Through Hole
  • RoHS Compliant
    Yes

Technical Documents
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