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IKW25N120H3

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IKW25N120H3 Image

The IKW25N120H3 from Infineon Technologies is a IGBT with Gate Emitter Voltage -20 to 20 V, Saturated Collector Emitter Voltage 2.05 to 2.70 V, DC Collector Current 25 to 50 A, DC Forward Current 12 to 25 A, Junction Temperature 175 Degree C. More details for IKW25N120H3 can be seen below.

Product Specifications

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Product Details

  • Part Number
    IKW25N120H3
  • Manufacturer
    Infineon Technologies
  • Description
    1200 V ,Single Switch IGBT Module

General

  • Types
    Single Switch IGBT
  • No. of Transistors
    Single
  • Gate Emitter Voltage
    -20 to 20 V
  • Saturated Collector Emitter Voltage
    2.05 to 2.70 V
  • DC Collector Current
    25 to 50 A
  • DC Forward Current
    12 to 25 A
  • Junction Temperature
    175 Degree C
  • Gate Emitter Leakage Current
    0.6 uA
  • Operating Temperature
    -40 to 175 Degree C
  • Collector Emitter Voltage
    1200 V
  • Power Dissipation
    156 to 326 W
  • Package
    TO-247-3
  • Package Type
    Through Hole
  • Applications
    Uninterruptible power supplies, welding converters, converter swith high switching frequency
  • RoHS Compliant
    Yes

Technical Documents
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