1. everything PE
  2. Power Electronics
  3. Power Transistors
  4. IGBTs
  5. Infineon Technologies
  6. IKZA75N65RH5

IKZA75N65RH5

Download Datasheet Request Quote

Note : Your request will be directed to Infineon Technologies.

IKZA75N65RH5 Image

The IKZA75N65RH5 from Infineon Technologies is a IGBT with Gate Emitter Voltage -30 to 30 V, Saturated Collector Emitter Voltage 1.65 to 2.10 V, DC Collector Current 75 to 80 V, Peak Collector Current 75 to 80 A, DC Forward Current 30.7 to 45.7 A. More details for IKZA75N65RH5 can be seen below.

Product Specifications

View similar products

Product Details

  • Part Number
    IKZA75N65RH5
  • Manufacturer
    Infineon Technologies
  • Description
    650 V ,Single Switch IGBT Module

General

  • Types
    Single Switch IGBT
  • No. of Transistors
    Single
  • Gate Emitter Voltage
    -30 to 30 V
  • Saturated Collector Emitter Voltage
    1.65 to 2.10 V
  • DC Collector Current
    75 to 80 V
  • Peak Collector Current
    75 to 80 A
  • DC Forward Current
    30.7 to 45.7 A
  • Junction Temperature
    175 Degree C
  • Gate Emitter Leakage Current
    0.1 uA
  • Operating Temperature
    -40 to 175 Degree C
  • Collector Emitter Voltage
    650 V
  • Power Dissipation
    198 to 395 W
  • Package
    TO-247-4
  • Package Type
    Through Hole
  • Applications
    Industrial Power Supplies -Industrial SMPS -Industrial UPS, Energy Generation -Solar String Inverter, Energy Distribution -Energy Storage, Infrastructure–Charge -Charger
  • RoHS Compliant
    Yes

Technical Documents
View details on the manufacturer's website
View similar products

Latest IGBTs

View more products