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IGW25N120H3

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IGW25N120H3 Image

The IGW25N120H3 from Infineon Technologies is a IGBT with Gate Emitter Voltage -20 to 20 V, Saturated Collector Emitter Voltage 2.05 to 2.70 V, DC Collector Current 25 to 50 V, Peak Collector Current 25 to 50 A, Junction Temperature 175 Degree C. More details for IGW25N120H3 can be seen below.

Product Specifications

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Product Details

  • Part Number
    IGW25N120H3
  • Manufacturer
    Infineon Technologies
  • Description
    1200 V ,Single Switch IGBT Module

General

  • Types
    Single Switch IGBT
  • No. of Transistors
    Single
  • Gate Emitter Voltage
    -20 to 20 V
  • Saturated Collector Emitter Voltage
    2.05 to 2.70 V
  • DC Collector Current
    25 to 50 V
  • Peak Collector Current
    25 to 50 A
  • Junction Temperature
    175 Degree C
  • Gate Emitter Leakage Current
    0.6 uA
  • Operating Temperature
    -40 to 175 Degree C
  • Collector Emitter Voltage
    1200 V
  • Power Dissipation
    156 to 326 W
  • Package
    TO-247
  • Package Type
    Through Hole
  • Applications
    Solar inverters, Uninterruptible power supplies, Welding converters, Mid to high range switching frequency
  • RoHS Compliant
    Yes

Technical Documents
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