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IKD15N60RF

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IKD15N60RF Image

The IKD15N60RF from Infineon Technologies is a IGBT with Gate Emitter Voltage -20 to 20 V, Saturated Collector Emitter Voltage 2.20 to 2.50 V, DC Collector Current 15 to 30 V, Peak Collector Current 15 to 30 A, DC Forward Current 15 to 30 A. More details for IKD15N60RF can be seen below.

Product Specifications

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Product Details

  • Part Number
    IKD15N60RF
  • Manufacturer
    Infineon Technologies
  • Description
    600 V ,Single Switch IGBT Module

General

  • Types
    Single Switch IGBT
  • No. of Transistors
    Single
  • Gate Emitter Voltage
    -20 to 20 V
  • Saturated Collector Emitter Voltage
    2.20 to 2.50 V
  • DC Collector Current
    15 to 30 V
  • Peak Collector Current
    15 to 30 A
  • DC Forward Current
    15 to 30 A
  • Junction Temperature
    175 Degree C
  • Gate Emitter Leakage Current
    0.1 uA
  • Operating Temperature
    -40 to 175 Degree C
  • Collector Emitter Voltage
    600 V
  • Power Dissipation
    250 W
  • Package
    DPAK (TO-252-3)
  • Package Type
    Through Hole
  • Applications
    Compressors, Pumps, Fans
  • RoHS Compliant
    Yes

Technical Documents
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