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IGW25T120

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IGW25T120 Image

The IGW25T120 from Infineon Technologies is a IGBT with Gate Emitter Voltage -20 to 20 V, Saturated Collector Emitter Voltage 1.7 to 2.2 V, DC Collector Current 25 to 50 V, Peak Collector Current 25 to 50 A, Junction Temperature 150 Degree C. More details for IGW25T120 can be seen below.

Product Specifications

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Product Details

  • Part Number
    IGW25T120
  • Manufacturer
    Infineon Technologies
  • Description
    1200 V ,Single Switch IGBT Module

General

  • Types
    Single Switch IGBT
  • No. of Transistors
    Single
  • Gate Emitter Voltage
    -20 to 20 V
  • Saturated Collector Emitter Voltage
    1.7 to 2.2 V
  • DC Collector Current
    25 to 50 V
  • Peak Collector Current
    25 to 50 A
  • Junction Temperature
    150 Degree C
  • Gate Emitter Leakage Current
    0.6 uA
  • Operating Temperature
    -40 to 150 Degree C
  • Collector Emitter Voltage
    1200 V
  • Power Dissipation
    190 W
  • Package
    TO-247
  • Package Type
    Through Hole
  • RoHS Compliant
    Yes

Technical Documents
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