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IHW20N120R5

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The IHW20N120R5 from Infineon Technologies is a IGBT with Gate Emitter Voltage -25 to 25 V, Saturated Collector Emitter Voltage 1.55 to 1.75 V, DC Collector Current 20 to 40 A, DC Forward Current 20 to 40 A, Junction Temperature 175 Degree C. More details for IHW20N120R5 can be seen below.

Product Specifications

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Product Details

  • Part Number
    IHW20N120R5
  • Manufacturer
    Infineon Technologies
  • Description
    1200 V ,Single Switch IGBT Module

General

  • Types
    Single Switch IGBT
  • No. of Transistors
    Single
  • Gate Emitter Voltage
    -25 to 25 V
  • Saturated Collector Emitter Voltage
    1.55 to 1.75 V
  • DC Collector Current
    20 to 40 A
  • DC Forward Current
    20 to 40 A
  • Junction Temperature
    175 Degree C
  • Gate Emitter Leakage Current
    0.1 uA
  • Operating Temperature
    -40 to 175 Degree C
  • Collector Emitter Voltage
    1200 V
  • Power Dissipation
    144 to 288 W
  • Package
    TO-247-3
  • Package Type
    Through Hole
  • Applications
    Inductive cooking, Inverterized microwave ovens, Resonant converters, Soft switching applications
  • RoHS Compliant
    Yes

Technical Documents
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