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IHW40N120R5

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IHW40N120R5 Image

The IHW40N120R5 from Infineon Technologies is a IGBT with Gate Emitter Voltage -25 to 25 V, Saturated Collector Emitter Voltage 1.55 to 1.90 V, DC Collector Current 40 to 80 A, DC Forward Current 40 to 80 A, Junction Temperature 175 Degree C. More details for IHW40N120R5 can be seen below.

Product Specifications

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Product Details

  • Part Number
    IHW40N120R5
  • Manufacturer
    Infineon Technologies
  • Description
    1200 V ,Single Switch IGBT Module

General

  • Types
    Single Switch IGBT
  • No. of Transistors
    Single
  • Gate Emitter Voltage
    -25 to 25 V
  • Saturated Collector Emitter Voltage
    1.55 to 1.90 V
  • DC Collector Current
    40 to 80 A
  • DC Forward Current
    40 to 80 A
  • Junction Temperature
    175 Degree C
  • Gate Emitter Leakage Current
    0.1 uA
  • Operating Temperature
    -40 to 175 Degree C
  • Collector Emitter Voltage
    1200 V
  • Power Dissipation
    197 to 394 W
  • Package
    TO-247-3
  • Package Type
    Through Hole
  • Applications
    Induction cooking, Microwave ovens
  • RoHS Compliant
    Yes

Technical Documents
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