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IKW30N65WR5

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IKW30N65WR5 Image

The IKW30N65WR5 from Infineon Technologies is a IGBT with Gate Emitter Voltage -20 to 20 V, Saturated Collector Emitter Voltage 1.40 to 1.80 V, DC Collector Current 30 to 60 A, DC Forward Current 15 to 24 A, Junction Temperature 175 Degree C. More details for IKW30N65WR5 can be seen below.

Product Specifications

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Product Details

  • Part Number
    IKW30N65WR5
  • Manufacturer
    Infineon Technologies
  • Description
    650 V ,Single Switch IGBT Module

General

  • Types
    Single Switch IGBT
  • No. of Transistors
    Single
  • Gate Emitter Voltage
    -20 to 20 V
  • Saturated Collector Emitter Voltage
    1.40 to 1.80 V
  • DC Collector Current
    30 to 60 A
  • DC Forward Current
    15 to 24 A
  • Junction Temperature
    175 Degree C
  • Gate Emitter Leakage Current
    0.1 uA
  • Operating Temperature
    -40 to 175 Degree C
  • Collector Emitter Voltage
    650 V
  • Power Dissipation
    75 to 185 W
  • Package
    TO-247-3
  • Package Type
    Through Hole
  • Applications
    Welding, PFC, ZCS-converters
  • RoHS Compliant
    Yes

Technical Documents
View details on the manufacturer's website
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