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AUIRG4PH50S

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AUIRG4PH50S Image

The AUIRG4PH50S from Infineon Technologies is a IGBT with Gate Emitter Voltage -20 to 20 V, Saturated Collector Emitter Voltage 1.47 to 1.7 V, DC Collector Current 81 to 141 A, Junction Temperature -55 to 150 Degree C, Gate Emitter Leakage Current 0.1 uA. More details for AUIRG4PH50S can be seen below.

Product Specifications

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Product Details

  • Part Number
    AUIRG4PH50S
  • Manufacturer
    Infineon Technologies
  • Description
    1200 V, Single Switch IGBT Module

General

  • Types
    Single Switch IGBT
  • No. of Transistors
    Single
  • Gate Emitter Voltage
    -20 to 20 V
  • Saturated Collector Emitter Voltage
    1.47 to 1.7 V
  • DC Collector Current
    81 to 141 A
  • Junction Temperature
    -55 to 150 Degree C
  • Gate Emitter Leakage Current
    0.1 uA
  • Collector Emitter Voltage
    1200 V
  • Power Dissipation
    217 to 543 W
  • Package
    TO247
  • Package Type
    Through Hole
  • RoHS Compliant
    Yes

Technical Documents
View details on the manufacturer's website
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