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DF200R12W1H3_B27

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DF200R12W1H3_B27 Image

The DF200R12W1H3_B27 from Infineon Technologies is a IGBT with Gate Emitter Voltage -20 to 20 V, Saturated Collector Emitter Voltage 1.30 to 1.35 V, DC Collector Current 200 A, Peak Collector Current 60 A, DC Forward Current 200 A. More details for DF200R12W1H3_B27 can be seen below.

Product Specifications

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Product Details

  • Part Number
    DF200R12W1H3_B27
  • Manufacturer
    Infineon Technologies
  • Description
    1200 V, Booster IGBT Module

General

  • No. of Transistors
    Dual
  • Gate Emitter Voltage
    -20 to 20 V
  • Saturated Collector Emitter Voltage
    1.30 to 1.35 V
  • DC Collector Current
    200 A
  • Peak Collector Current
    60 A
  • DC Forward Current
    200 A
  • Peak Forward Current
    60 A
  • Gate Emitter Leakage Current
    0.1 uA
  • Collector Emitter Voltage
    1200 V
  • Power Dissipation
    375 W
  • Package
    AG-EASY1B
  • Package Type
    Chassis Mount
  • Applications
    Solar applications
  • RoHS Compliant
    Yes

Technical Documents
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