1. everything PE
  2. Power Electronics
  3. Power Transistors
  4. IGBTs
  5. Infineon Technologies
  6. F4-50R07W1H3_B11A

F4-50R07W1H3_B11A

Download Datasheet Request Quote

Note : Your request will be directed to Infineon Technologies.

F4-50R07W1H3_B11A Image

The F4-50R07W1H3_B11A from Infineon Technologies is a IGBT with Gate Emitter Voltage -20 to 20 V, Saturated Collector Emitter Voltage 1.50 to 1.85 V, DC Collector Current 25 to 55 A, Peak Collector Current 100 A, DC Forward Current 25 A. More details for F4-50R07W1H3_B11A can be seen below.

Product Specifications

View similar products

Product Details

  • Part Number
    F4-50R07W1H3_B11A
  • Manufacturer
    Infineon Technologies
  • Description
    650 V, Field Stop Trench IGBT Module

General

  • Types
    Field Stop Trench IGBT
  • No. of Transistors
    Quad
  • Gate Emitter Voltage
    -20 to 20 V
  • Saturated Collector Emitter Voltage
    1.50 to 1.85 V
  • DC Collector Current
    25 to 55 A
  • Peak Collector Current
    100 A
  • DC Forward Current
    25 A
  • Peak Forward Current
    50 A
  • Gate Emitter Leakage Current
    0.4 uA
  • Collector Emitter Voltage
    650 V
  • Power Dissipation
    200 W
  • Package Type
    Chassis Mount
  • Applications
    Automotive Applications, High Frequency Switching Application, DC/Dc converter, Auxiliary Inverters, Hybrid Electrical Vehicles(H)EV, Inductive Heating and Welding
  • RoHS Compliant
    Yes

Technical Documents
View details on the manufacturer's website
View similar products

Latest IGBTs

View more products