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F4-75R07W1H3_B11A

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F4-75R07W1H3_B11A Image

The F4-75R07W1H3_B11A from Infineon Technologies is a IGBT with Gate Emitter Voltage -20 to 20 V, Saturated Collector Emitter Voltage 1.50 to 1.85 V, DC Collector Current 37.5 A, Peak Collector Current 150 A, DC Forward Current 25 A. More details for F4-75R07W1H3_B11A can be seen below.

Product Specifications

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Product Details

  • Part Number
    F4-75R07W1H3_B11A
  • Manufacturer
    Infineon Technologies
  • Description
    650 V, Field Stop Trench IGBT Module

General

  • Types
    Field Stop Trench IGBT
  • No. of Transistors
    Quad
  • Gate Emitter Voltage
    -20 to 20 V
  • Saturated Collector Emitter Voltage
    1.50 to 1.85 V
  • DC Collector Current
    37.5 A
  • Peak Collector Current
    150 A
  • DC Forward Current
    25 A
  • Peak Forward Current
    50 A
  • Gate Emitter Leakage Current
    0.4 uA
  • Collector Emitter Voltage
    650 V
  • Power Dissipation
    275 W
  • Package Type
    Chassis Mount
  • Applications
    Automotive Applications, High Frequency Switching Application, DC/Dc converter, Auxiliary Inverters, Hybrid Electrical Vehicles(H)EV, Inductive Heating and Welding
  • RoHS Compliant
    Yes

Technical Documents
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