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FF100R12KS4

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FF100R12KS4 Image

The FF100R12KS4 from Infineon Technologies is a IGBT with Gate Emitter Voltage -20 to 20 V, Saturated Collector Emitter Voltage 3.20 to 3.85 V, DC Collector Current 100 A, Peak Collector Current 200 A, DC Forward Current 100 A. More details for FF100R12KS4 can be seen below.

Product Specifications

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Product Details

  • Part Number
    FF100R12KS4
  • Manufacturer
    Infineon Technologies
  • Description
    1200 V, Dual Switch IGBT Module

General

  • Types
    Dual Switch IGBT
  • No. of Transistors
    Dual
  • Gate Emitter Voltage
    -20 to 20 V
  • Saturated Collector Emitter Voltage
    3.20 to 3.85 V
  • DC Collector Current
    100 A
  • Peak Collector Current
    200 A
  • DC Forward Current
    100 A
  • Peak Forward Current
    200 A
  • Gate Emitter Leakage Current
    0.4 uA
  • Collector Emitter Voltage
    1200 V
  • Power Dissipation
    780 W
  • Package
    AG-62MM
  • Package Type
    Chassis Mount
  • Applications
    High Frequency Switching Application, Medical Applications, Motor Drives, Resonant Inverter Appliccations, Servo Drives, UPS Systems
  • RoHS Compliant
    Yes

Technical Documents
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