FF1800R17IP5P

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FF1800R17IP5P Image

The FF1800R17IP5P from Infineon Technologies is a IGBT with Gate Emitter Voltage -20 to 20 V, Saturated Collector Emitter Voltage 1.75 to 2.90 V, DC Collector Current 1800 A, Peak Collector Current 3600 A, DC Forward Current 1800 A. More details for FF1800R17IP5P can be seen below.

Product Specifications

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Product Details

  • Part Number
    FF1800R17IP5P
  • Manufacturer
    Infineon Technologies
  • Description
    1700 V, Field Stop Trench IGBT Module

General

  • Types
    Field Stop Trench IGBT
  • No. of Transistors
    Dual
  • Gate Emitter Voltage
    -20 to 20 V
  • Saturated Collector Emitter Voltage
    1.75 to 2.90 V
  • DC Collector Current
    1800 A
  • Peak Collector Current
    3600 A
  • DC Forward Current
    1800 A
  • Peak Forward Current
    3600 A
  • Gate Emitter Leakage Current
    0.4 uA
  • Collector Emitter Voltage
    1700 V
  • Power Dissipation
    0.02 W
  • Package
    AG-PRIME3+
  • Package Type
    Chassis Mount
  • Applications
    High power converters, Traction drives, Moter Drives, Wind turbines
  • RoHS Compliant
    Yes

Technical Documents

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