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FF225R17ME4

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FF225R17ME4 Image

The FF225R17ME4 from Infineon Technologies is a IGBT with Gate Emitter Voltage -20 to 20 V, Saturated Collector Emitter Voltage 1.95 to 2.45 V, DC Collector Current 225 A, Peak Collector Current 450 A, DC Forward Current 225 A. More details for FF225R17ME4 can be seen below.

Product Specifications

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Product Details

  • Part Number
    FF225R17ME4
  • Manufacturer
    Infineon Technologies
  • Description
    1700 V, Field Stop Trench IGBT Module

General

  • Types
    Field Stop Trench IGBT
  • No. of Transistors
    Dual
  • Gate Emitter Voltage
    -20 to 20 V
  • Saturated Collector Emitter Voltage
    1.95 to 2.45 V
  • DC Collector Current
    225 A
  • Peak Collector Current
    450 A
  • DC Forward Current
    225 A
  • Peak Forward Current
    450 A
  • Gate Emitter Leakage Current
    0.4 uA
  • Collector Emitter Voltage
    1700 V
  • Power Dissipation
    1500 W
  • Package
    AG-ECONOD
  • Package Type
    Chassis Mount
  • Applications
    Moter drives, UPS systems, Servo Drives, Wind Turbines
  • RoHS Compliant
    Yes

Technical Documents
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