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FF300R08W2P2_B11A

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FF300R08W2P2_B11A Image

The FF300R08W2P2_B11A from Infineon Technologies is a IGBT with Gate Emitter Voltage -20 to 20 V, Saturated Collector Emitter Voltage 1 to 1.18 V, DC Collector Current 200 A, Peak Collector Current 600 A, DC Forward Current 300 A. More details for FF300R08W2P2_B11A can be seen below.

Product Specifications

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Product Details

  • Part Number
    FF300R08W2P2_B11A
  • Manufacturer
    Infineon Technologies
  • Description
    750 V, Half Bridge IGBT Module

General

  • Types
    Half Bridge IGBT
  • No. of Transistors
    Dual
  • Gate Emitter Voltage
    -20 to 20 V
  • Saturated Collector Emitter Voltage
    1 to 1.18 V
  • DC Collector Current
    200 A
  • Peak Collector Current
    600 A
  • DC Forward Current
    300 A
  • Peak Forward Current
    600 A
  • Gate Emitter Leakage Current
    0.01 uA
  • Collector Emitter Voltage
    750 V
  • Power Dissipation
    0.02 W
  • Package Type
    Chassis Mount
  • Applications
    Automotive applications, (Hybrid) electrical vehicles (H)EV, Motor drives
  • RoHS Compliant
    Yes

Technical Documents
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