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FF450R08A03P2

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FF450R08A03P2 Image

The FF450R08A03P2 from Infineon Technologies is a IGBT with Gate Emitter Voltage -20 to 20 V, Saturated Collector Emitter Voltage 1.20 to 1.44 V, DC Collector Current 300 A, Peak Collector Current 900 A, DC Forward Current 300 A. More details for FF450R08A03P2 can be seen below.

Product Specifications

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Product Details

  • Part Number
    FF450R08A03P2
  • Manufacturer
    Infineon Technologies
  • Description
    750 V, Half Bridge IGBT Module

General

  • Types
    Half Bridge IGBT
  • No. of Transistors
    Dual
  • Gate Emitter Voltage
    -20 to 20 V
  • Saturated Collector Emitter Voltage
    1.20 to 1.44 V
  • DC Collector Current
    300 A
  • Peak Collector Current
    900 A
  • DC Forward Current
    300 A
  • Peak Forward Current
    900 A
  • Gate Emitter Leakage Current
    0.4 uA
  • Collector Emitter Voltage
    750 V
  • Power Dissipation
    1667 W
  • Package Type
    Chassis Mount
  • Applications
    Automotive Applications, Hybrid Electrical Vehicles(H)EV, Optimized for automotive applications with DC link voltages up to 450 V and gate driver voltage level of-8V/+15V
  • RoHS Compliant
    Yes

Technical Documents
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