1. everything PE
  2. Power Electronics
  3. Power Transistors
  4. IGBTs
  5. Infineon Technologies
  6. FF450R12ME4P

FF450R12ME4P

Download Datasheet Request Quote

Note : Your request will be directed to Infineon Technologies.

FF450R12ME4P Image

The FF450R12ME4P from Infineon Technologies is a IGBT with Gate Emitter Voltage -20 to 20 V, Saturated Collector Emitter Voltage 1.75 to 2.10 V, DC Collector Current 450 A, Peak Collector Current 900 A, DC Forward Current 450 A. More details for FF450R12ME4P can be seen below.

Product Specifications

View similar products

Product Details

  • Part Number
    FF450R12ME4P
  • Manufacturer
    Infineon Technologies
  • Description
    1200 V, Field Stop Trench IGBT Module

General

  • Types
    Field Stop Trench IGBT
  • No. of Transistors
    Dual
  • Gate Emitter Voltage
    -20 to 20 V
  • Saturated Collector Emitter Voltage
    1.75 to 2.10 V
  • DC Collector Current
    450 A
  • Peak Collector Current
    900 A
  • DC Forward Current
    450 A
  • Peak Forward Current
    900 A
  • Gate Emitter Leakage Current
    0.4 uA
  • Collector Emitter Voltage
    1200 V
  • Power Dissipation
    0.02 W
  • Package
    AG-ECONOD
  • Package Type
    Chassis Mount
  • Applications
    Moter drives, UPS systems, Servo Drives, Wind Turbines
  • RoHS Compliant
    Yes

Technical Documents
View details on the manufacturer's website
View similar products

Latest IGBTs

View more products