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FF800R17KP4_B2

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FF800R17KP4_B2 Image

The FF800R17KP4_B2 from Infineon Technologies is a IGBT with Gate Emitter Voltage -20 to 20 V, Saturated Collector Emitter Voltage 1.80 to 2.70 V, DC Collector Current 800 A, Peak Collector Current 1600 A, DC Forward Current 800 A. More details for FF800R17KP4_B2 can be seen below.

Product Specifications

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Product Details

  • Part Number
    FF800R17KP4_B2
  • Manufacturer
    Infineon Technologies
  • Description
    1700 V, Field Stop Trench IGBT Module

General

  • Types
    Field Stop Trench IGBT
  • No. of Transistors
    Dual
  • Gate Emitter Voltage
    -20 to 20 V
  • Saturated Collector Emitter Voltage
    1.80 to 2.70 V
  • DC Collector Current
    800 A
  • Peak Collector Current
    1600 A
  • DC Forward Current
    800 A
  • Peak Forward Current
    1600 A
  • Gate Emitter Leakage Current
    0.4 uA
  • Collector Emitter Voltage
    1700 V
  • Power Dissipation
    1200000 W
  • Package
    A-IHM130
  • Package Type
    Chassis Mount
  • Applications
    High Power Converters, Motor Drives, UPS Systems, Wind Turbines, Medium voltage converters
  • RoHS Compliant
    Yes

Technical Documents
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