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FS100R07N2E4

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FS100R07N2E4 Image

The FS100R07N2E4 from Infineon Technologies is a IGBT with Gate Emitter Voltage -20 to 20 V, Saturated Collector Emitter Voltage 1.55 to 1.95 V, DC Collector Current 100 A, Peak Collector Current 200 A, DC Forward Current 100 A. More details for FS100R07N2E4 can be seen below.

Product Specifications

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Product Details

  • Part Number
    FS100R07N2E4
  • Manufacturer
    Infineon Technologies
  • Description
    650 V, Field Stop Trench IGBT Module

General

  • Types
    Field Stop Trench IGBT
  • No. of Transistors
    Hex
  • Gate Emitter Voltage
    -20 to 20 V
  • Saturated Collector Emitter Voltage
    1.55 to 1.95 V
  • DC Collector Current
    100 A
  • Peak Collector Current
    200 A
  • DC Forward Current
    100 A
  • Peak Forward Current
    200 A
  • Gate Emitter Leakage Current
    0.4 uA
  • Collector Emitter Voltage
    650 V
  • Power Dissipation
    335 W
  • Package
    AG-ECONO2B
  • Package Type
    Chassis Mount
  • Applications
    Moter Drives
  • RoHS Compliant
    Yes

Technical Documents
View details on the manufacturer's website
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