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FS150R07N3E4

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FS150R07N3E4 Image

The FS150R07N3E4 from Infineon Technologies is a IGBT with Gate Emitter Voltage -20 to 20 V, Saturated Collector Emitter Voltage 1.55 to 1.95 V, DC Collector Current 150 A, Peak Collector Current 300 A, DC Forward Current 150 A. More details for FS150R07N3E4 can be seen below.

Product Specifications

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Product Details

  • Part Number
    FS150R07N3E4
  • Manufacturer
    Infineon Technologies
  • Description
    650 V, Field Stop Trench IGBT Module

General

  • Types
    Field Stop Trench IGBT
  • No. of Transistors
    Hex
  • Gate Emitter Voltage
    -20 to 20 V
  • Saturated Collector Emitter Voltage
    1.55 to 1.95 V
  • DC Collector Current
    150 A
  • Peak Collector Current
    300 A
  • DC Forward Current
    150 A
  • Peak Forward Current
    300 A
  • Gate Emitter Leakage Current
    0.4 uA
  • Collector Emitter Voltage
    650 V
  • Power Dissipation
    430 W
  • Package
    AG-ECONO3
  • Package Type
    Chassis Mount
  • Applications
    Moter Drives
  • RoHS Compliant
    Yes

Technical Documents
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