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FS200R07A02E3_S6

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FS200R07A02E3_S6 Image

The FS200R07A02E3_S6 from Infineon Technologies is a IGBT with Gate Emitter Voltage -20 to 20 V, Saturated Collector Emitter Voltage 1.45 to 2.25 V, DC Collector Current 200 A, Peak Collector Current 400 A, DC Forward Current 200 A. More details for FS200R07A02E3_S6 can be seen below.

Product Specifications

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Product Details

  • Part Number
    FS200R07A02E3_S6
  • Manufacturer
    Infineon Technologies
  • Description
    700 V, Field Stop Trench IGBT Module

General

  • Types
    Field Stop Trench IGBT
  • No. of Transistors
    Hex
  • Gate Emitter Voltage
    -20 to 20 V
  • Saturated Collector Emitter Voltage
    1.45 to 2.25 V
  • DC Collector Current
    200 A
  • Peak Collector Current
    400 A
  • DC Forward Current
    200 A
  • Peak Forward Current
    400 A
  • Gate Emitter Leakage Current
    0.4 uA
  • Collector Emitter Voltage
    700 V
  • Power Dissipation
    694 W
  • Package Type
    Chassis Mount
  • Applications
    Automotive Applications, Hybrid Electrical Vehicles(H)EV
  • RoHS Compliant
    Yes

Technical Documents
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