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FS200R07A1E3

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The FS200R07A1E3 from Infineon Technologies is a IGBT with Gate Emitter Voltage -20 to 20 V, Saturated Collector Emitter Voltage 1.45 to 1.90 V, DC Collector Current 200 A, Peak Collector Current 400 A, DC Forward Current 200 A. More details for FS200R07A1E3 can be seen below.

Product Specifications

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Product Details

  • Part Number
    FS200R07A1E3
  • Manufacturer
    Infineon Technologies
  • Description
    650 V, Field Stop Trench IGBT Module

General

  • Types
    Field Stop Trench IGBT
  • No. of Transistors
    Hex
  • Gate Emitter Voltage
    -20 to 20 V
  • Saturated Collector Emitter Voltage
    1.45 to 1.90 V
  • DC Collector Current
    200 A
  • Peak Collector Current
    400 A
  • DC Forward Current
    200 A
  • Peak Forward Current
    400 A
  • Gate Emitter Leakage Current
    0.4 uA
  • Collector Emitter Voltage
    650 V
  • Power Dissipation
    790 W
  • Package Type
    Chassis Mount
  • Applications
    Automotive Applications, Hybrid Electrical Vehicles(H)EV, Commercial Agriculture Vehicles, Motor Drives
  • RoHS Compliant
    Yes

Technical Documents
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