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FS75R07W2E3_B11A

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FS75R07W2E3_B11A Image

The FS75R07W2E3_B11A from Infineon Technologies is a IGBT with Gate Emitter Voltage -30 to 30 V, Saturated Collector Emitter Voltage 1.45 to 1.90 V, DC Collector Current 75 A, Peak Collector Current 150 A, DC Forward Current 75 A. More details for FS75R07W2E3_B11A can be seen below.

Product Specifications

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Product Details

  • Part Number
    FS75R07W2E3_B11A
  • Manufacturer
    Infineon Technologies
  • Description
    650 V, Field Stop Trench IGBT Module

General

  • Types
    Field Stop Trench IGBT
  • No. of Transistors
    Hex
  • Gate Emitter Voltage
    -30 to 30 V
  • Saturated Collector Emitter Voltage
    1.45 to 1.90 V
  • DC Collector Current
    75 A
  • Peak Collector Current
    150 A
  • DC Forward Current
    75 A
  • Peak Forward Current
    150 A
  • Gate Emitter Leakage Current
    0.4 uA
  • Collector Emitter Voltage
    650 V
  • Power Dissipation
    275 W
  • Package Type
    Chassis Mount
  • Applications
    Hybrid Electrical Vehicles (H)EV, Air Conditioning, Motor Drives
  • RoHS Compliant
    Yes

Technical Documents
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