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FS75R12KE3G

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The FS75R12KE3G from Infineon Technologies is a IGBT with Gate Emitter Voltage -20 to 20 V, Saturated Collector Emitter Voltage 1.70 to 2.15 V, DC Collector Current 75 A, Peak Collector Current 150 A, DC Forward Current 75 A. More details for FS75R12KE3G can be seen below.

Product Specifications

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Product Details

  • Part Number
    FS75R12KE3G
  • Manufacturer
    Infineon Technologies
  • Description
    1200 V, Hex Channel IGBT Module

General

  • Types
    Hex Channel IGBT
  • No. of Transistors
    Hex
  • Gate Emitter Voltage
    -20 to 20 V
  • Saturated Collector Emitter Voltage
    1.70 to 2.15 V
  • DC Collector Current
    75 A
  • Peak Collector Current
    150 A
  • DC Forward Current
    75 A
  • Peak Forward Current
    150 A
  • Gate Emitter Leakage Current
    0.4 uA
  • Collector Emitter Voltage
    1200 V
  • Power Dissipation
    355 A
  • Package
    AG-ECONO3
  • Package Type
    Chassis Mount
  • RoHS Compliant
    Yes

Technical Documents
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