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FS900R08A2P2_B31

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FS900R08A2P2_B31

Product Specifications

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Product Details

  • Part Number
    FS900R08A2P2_B31
  • Manufacturer
    Infineon Technologies
  • Description
    750 V, Hex Channel IGBT Module

General

  • Types
    Hex Channel IGBT
  • No. of Transistors
    Hex
  • Gate Emitter Voltage
    -20 to 20 V
  • Saturated Collector Emitter Voltage
    1.10 to 1.25 V
  • DC Collector Current
    900 A
  • Peak Collector Current
    1800 A
  • DC Forward Current
    900 A
  • Peak Forward Current
    1800 A
  • Gate Emitter Leakage Current
    0.4 uA
  • Collector Emitter Voltage
    750 V
  • Power Dissipation
    1546 W
  • Package
    AG-HYBRID2-1
  • Package Type
    Chassis Mount
  • Applications
    Automotive Applications, Hybrid Electrical Vehicles (H)EV, Commercial Agriculture Vehicles, Motor Drives, Optimized for automotive applications with DC link voltages upto 450 V
  • RoHS Compliant
    Yes

Technical Documents
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