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DG50X12T2

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DG50X12T2 Image

The DG50X12T2 from StarPower is a IGBT with Gate Emitter Voltage -20 to 20 V, Saturated Collector Emitter Voltage 1.75 to 2.2 V, DC Collector Current 100 A, Junction Temperature -40 to 175 Degree C, Gate Emitter Leakage Current 0.4 uA. More details for DG50X12T2 can be seen below.

Product Specifications

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Product Details

  • Part Number
    DG50X12T2
  • Manufacturer
    StarPower
  • Description
    1200 V Single Switch, Field Stop Trench IGBT Module

General

  • Types
    Field Stop Trench IGBT, Single Switch IGBT
  • No. of Transistors
    Single
  • Gate Emitter Voltage
    -20 to 20 V
  • Saturated Collector Emitter Voltage
    1.75 to 2.2 V
  • DC Collector Current
    100 A
  • Junction Temperature
    -40 to 175 Degree C
  • Gate Emitter Leakage Current
    0.4 uA
  • Collector Emitter Voltage
    1200 V
  • Power Dissipation
    1049 W
  • Package
    TO-247
  • Package Type
    Through Hole
  • Applications
    Inverter for motor drive, AC and DC servo drive amplifier, Uninterruptible power supply

Technical Documents
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