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FZ3600R17HE4P

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FZ3600R17HE4P Image

The FZ3600R17HE4P from Infineon Technologies is a IGBT with Gate Emitter Voltage -20 to 20 V, Saturated Collector Emitter Voltage 1.95 to 2.90 V, DC Collector Current 3600 A, Peak Collector Current 7200 A, DC Forward Current 3600 A. More details for FZ3600R17HE4P can be seen below.

Product Specifications

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Product Details

  • Part Number
    FZ3600R17HE4P
  • Manufacturer
    Infineon Technologies
  • Description
    1700 V, Field Stop Trench IGBT Module

General

  • Types
    Field Stop Trench IGBT
  • No. of Transistors
    Triple
  • Gate Emitter Voltage
    -20 to 20 V
  • Saturated Collector Emitter Voltage
    1.95 to 2.90 V
  • DC Collector Current
    3600 A
  • Peak Collector Current
    7200 A
  • DC Forward Current
    3600 A
  • Peak Forward Current
    7200 A
  • Gate Emitter Leakage Current
    0.4 uA
  • Collector Emitter Voltage
    1700 V
  • Package
    AG-IHMB190
  • Package Type
    Chassis Mount
  • Applications
    High power converters, Moter Drives
  • RoHS Compliant
    Yes

Technical Documents
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