1. everything PE
  2. Power Electronics
  3. Power Transistors
  4. IGBTs
  5. Infineon Technologies
  6. FZ400R12KE3B1

FZ400R12KE3B1

Download Datasheet Request Quote

Note : Your request will be directed to Infineon Technologies.

FZ400R12KE3B1 Image

The FZ400R12KE3B1 from Infineon Technologies is a IGBT with Gate Emitter Voltage -20 to 20 V, Saturated Collector Emitter Voltage 1.70 to 2.15 V, DC Collector Current 400 A, Peak Collector Current 800 A, DC Forward Current 400 A. More details for FZ400R12KE3B1 can be seen below.

Product Specifications

View similar products

Product Details

  • Part Number
    FZ400R12KE3B1
  • Manufacturer
    Infineon Technologies
  • Description
    1200 V, Single Switch IGBT Module

General

  • Types
    Single Switch IGBT
  • No. of Transistors
    Single
  • Gate Emitter Voltage
    -20 to 20 V
  • Saturated Collector Emitter Voltage
    1.70 to 2.15 V
  • DC Collector Current
    400 A
  • Peak Collector Current
    800 A
  • DC Forward Current
    400 A
  • Peak Forward Current
    800 A
  • Gate Emitter Leakage Current
    0.4 uA
  • Collector Emitter Voltage
    1200 V
  • Power Dissipation
    2250 W
  • Package
    AG-62MM
  • Package Type
    Chassis Mount
  • RoHS Compliant
    Yes

Technical Documents
View details on the manufacturer's website
View similar products

Latest IGBTs

View more products