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FZ800R12KE3

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FZ800R12KE3 Image

The FZ800R12KE3 from Infineon Technologies is a IGBT with Gate Emitter Voltage -20 to 20 V, Saturated Collector Emitter Voltage 1.70 to 2.15 V, DC Collector Current 800 A, Peak Collector Current 1600 A, DC Forward Current 800 A. More details for FZ800R12KE3 can be seen below.

Product Specifications

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Product Details

  • Part Number
    FZ800R12KE3
  • Manufacturer
    Infineon Technologies
  • Description
    1200 V, Field Stop Trench IGBT Module

General

  • Types
    Field Stop Trench IGBT
  • No. of Transistors
    Single
  • Gate Emitter Voltage
    -20 to 20 V
  • Saturated Collector Emitter Voltage
    1.70 to 2.15 V
  • DC Collector Current
    800 A
  • Peak Collector Current
    1600 A
  • DC Forward Current
    800 A
  • Peak Forward Current
    1600 A
  • Gate Emitter Leakage Current
    0.4 uA
  • Collector Emitter Voltage
    1200 V
  • Power Dissipation
    3550 W
  • Package
    AG-62MM
  • Package Type
    Chassis Mount
  • Applications
    High Power Converters, Motor Drives, UPS Systems, Wind Turbines
  • RoHS Compliant
    Yes

Technical Documents
View details on the manufacturer's website
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