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IEWS20R5135IPB

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IEWS20R5135IPB Image

The IEWS20R5135IPB from Infineon Technologies is a IGBT with Gate Emitter Voltage -25 to 25 V, Saturated Collector Emitter Voltage 1.65 to 1.90 V, DC Collector Current 20 to 40 A, DC Forward Current 20 to 40 A, Junction Temperature 150 Degree C. More details for IEWS20R5135IPB can be seen below.

Product Specifications

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Product Details

  • Part Number
    IEWS20R5135IPB
  • Manufacturer
    Infineon Technologies
  • Description
    1350 V ,Single Switch IGBT Module

General

  • Types
    Single Switch IGBT
  • No. of Transistors
    Single
  • Gate Emitter Voltage
    -25 to 25 V
  • Saturated Collector Emitter Voltage
    1.65 to 1.90 V
  • DC Collector Current
    20 to 40 A
  • DC Forward Current
    20 to 40 A
  • Junction Temperature
    150 Degree C
  • Operating Temperature
    -40 to 150 Degree C
  • Collector Emitter Voltage
    1350 V
  • Power Dissipation
    144 to 288 W
  • Package
    TO-247-6pin
  • Package Type
    Through Hole
  • Applications
    Induction cooking
  • RoHS Compliant
    Yes

Technical Documents
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