1. everything PE
  2. Power Electronics
  3. Power Transistors
  4. IGBTs
  5. Infineon Technologies
  6. IGC27T120T8Q

IGC27T120T8Q

Download Datasheet Request Quote

Note : Your request will be directed to Infineon Technologies.

IGC27T120T8Q Image

The IGC27T120T8Q from Infineon Technologies is a IGBT with Gate Emitter Voltage -20 to 20 V, Saturated Collector Emitter Voltage 1.78 to 2.42 V, DC Collector Current 25 A, Junction Temperature -40 to 175 Degree C, Gate Emitter Leakage Current 0.12 uA. More details for IGC27T120T8Q can be seen below.

Product Specifications

View similar products

Product Details

  • Part Number
    IGC27T120T8Q
  • Manufacturer
    Infineon Technologies
  • Description
    1200 V, Field Stop Trench IGBT Module

General

  • Types
    Field Stop Trench IGBT
  • No. of Transistors
    Single
  • Gate Emitter Voltage
    -20 to 20 V
  • Dimensions
    4.99 x 5.45 mm
  • Saturated Collector Emitter Voltage
    1.78 to 2.42 V
  • DC Collector Current
    25 A
  • Junction Temperature
    -40 to 175 Degree C
  • Gate Emitter Leakage Current
    0.12 uA
  • Collector Emitter Voltage
    1200 V
  • Package Type
    Die
  • Applications
    High frequency drives, Uninterruptible power supplies, Welding, Solar inverters
  • RoHS Compliant
    Yes

Technical Documents
View details on the manufacturer's website
View similar products

Latest IGBTs

View more products