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IGC54T65R3QE

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IGC54T65R3QE Image

The IGC54T65R3QE from Infineon Technologies is a IGBT with Gate Emitter Voltage -20 to 20 V, Saturated Collector Emitter Voltage 1.38 to 2.22 V, DC Collector Current 100 A, Junction Temperature -40 to 175 Degree C, Gate Emitter Leakage Current 0.15 uA. More details for IGC54T65R3QE can be seen below.

Product Specifications

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Product Details

  • Part Number
    IGC54T65R3QE
  • Manufacturer
    Infineon Technologies
  • Description
    650 V, Field Stop Trench IGBT Module

General

  • Types
    Field Stop Trench IGBT
  • No. of Transistors
    Single
  • Gate Emitter Voltage
    -20 to 20 V
  • Dimensions
    5.97 x 8.97 mm
  • Saturated Collector Emitter Voltage
    1.38 to 2.22 V
  • DC Collector Current
    100 A
  • Junction Temperature
    -40 to 175 Degree C
  • Gate Emitter Leakage Current
    0.15 uA
  • Collector Emitter Voltage
    650 V
  • Package Type
    Die
  • Applications
    uninterruptible power supplies, welding converters, converters with high switching frequency
  • RoHS Compliant
    Yes

Technical Documents
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