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IGP20N65F5

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IGP20N65F5 Image

The IGP20N65F5 from Infineon Technologies is a IGBT with Gate Emitter Voltage -30 to 30 V, Saturated Collector Emitter Voltage 1.60 to 2.10 V, DC Collector Current 21 to 42 V, Peak Collector Current 21 to 42 A, Junction Temperature 175 Degree C. More details for IGP20N65F5 can be seen below.

Product Specifications

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Product Details

  • Part Number
    IGP20N65F5
  • Manufacturer
    Infineon Technologies
  • Description
    650 V ,Single Switch IGBT Module

General

  • Types
    Single Switch IGBT
  • No. of Transistors
    Single
  • Gate Emitter Voltage
    -30 to 30 V
  • Saturated Collector Emitter Voltage
    1.60 to 2.10 V
  • DC Collector Current
    21 to 42 V
  • Peak Collector Current
    21 to 42 A
  • Junction Temperature
    175 Degree C
  • Gate Emitter Leakage Current
    0.1 uA
  • Operating Temperature
    -40 to 175 Degree C
  • Collector Emitter Voltage
    650 V
  • Power Dissipation
    63 to 125 W
  • Package
    TO-220
  • Package Type
    Through Hole
  • Applications
    Solar converters, Uninterruptible power supplies, Welding converters, Mid to high range switching frequency converters
  • RoHS Compliant
    Yes

Technical Documents
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