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IGP50N60T

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IGP50N60T Image

The IGP50N60T from Infineon Technologies is a IGBT with Gate Emitter Voltage -20 to 20 V, Saturated Collector Emitter Voltage 1.50 to 2 V, DC Collector Current 64 to 90 A, Junction Temperature 175 Degree C, Gate Emitter Leakage Current 0.1 uA. More details for IGP50N60T can be seen below.

Product Specifications

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Product Details

  • Part Number
    IGP50N60T
  • Manufacturer
    Infineon Technologies
  • Description
    600 V ,Single Switch IGBT Module

General

  • Types
    Single Switch IGBT
  • No. of Transistors
    Single
  • Gate Emitter Voltage
    -20 to 20 V
  • Saturated Collector Emitter Voltage
    1.50 to 2 V
  • DC Collector Current
    64 to 90 A
  • Junction Temperature
    175 Degree C
  • Gate Emitter Leakage Current
    0.1 uA
  • Operating Temperature
    -40 to 175 Degree C
  • Collector Emitter Voltage
    600 V
  • Power Dissipation
    333 W
  • Package
    TO-220
  • Package Type
    Through Hole
  • RoHS Compliant
    Yes

Technical Documents
View details on the manufacturer's website
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