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IGW15N120H3

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IGW15N120H3 Image

The IGW15N120H3 from Infineon Technologies is a IGBT with Gate Emitter Voltage -20 to 20 V, Saturated Collector Emitter Voltage 2.05 to 2.70 V, DC Collector Current 15 to 30 A, Junction Temperature 175 Degree C, Gate Emitter Leakage Current 0.6 uA. More details for IGW15N120H3 can be seen below.

Product Specifications

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Product Details

  • Part Number
    IGW15N120H3
  • Manufacturer
    Infineon Technologies
  • Description
    1200 V ,Single Switch IGBT Module

General

  • Types
    Single Switch IGBT
  • No. of Transistors
    Single
  • Gate Emitter Voltage
    -20 to 20 V
  • Saturated Collector Emitter Voltage
    2.05 to 2.70 V
  • DC Collector Current
    15 to 30 A
  • Junction Temperature
    175 Degree C
  • Gate Emitter Leakage Current
    0.6 uA
  • Operating Temperature
    -40 to 175 Degree C
  • Collector Emitter Voltage
    1200 V
  • Power Dissipation
    105 to 217 W
  • Package
    TO-247
  • Package Type
    Through Hole
  • Applications
    Uninterruptible power supplies, welding converters, converter swith high switching frequency
  • RoHS Compliant
    Yes

Technical Documents
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