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IGW40N60H3

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IGW40N60H3 Image

The IGW40N60H3 from Infineon Technologies is a IGBT with Gate Emitter Voltage -20 to 20 V, Saturated Collector Emitter Voltage 1.95 to 2.50 V, DC Collector Current 40 to 80 A, Junction Temperature 175 Degree C, Gate Emitter Leakage Current 0.1 uA. More details for IGW40N60H3 can be seen below.

Product Specifications

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Product Details

  • Part Number
    IGW40N60H3
  • Manufacturer
    Infineon Technologies
  • Description
    600 V ,Single Switch IGBT Module

General

  • Types
    Single Switch IGBT
  • No. of Transistors
    Single
  • Gate Emitter Voltage
    -20 to 20 V
  • Saturated Collector Emitter Voltage
    1.95 to 2.50 V
  • DC Collector Current
    40 to 80 A
  • Junction Temperature
    175 Degree C
  • Gate Emitter Leakage Current
    0.1 uA
  • Operating Temperature
    -40 to 175 Degree C
  • Collector Emitter Voltage
    600 V
  • Power Dissipation
    153 to 306 W
  • Package
    TO-247
  • Package Type
    Through Hole
  • Applications
    Uninterruptible power supplies, welding converters, converter swith high switching frequency
  • RoHS Compliant
    Yes

Technical Documents
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