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IGW40N60TP

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IGW40N60TP Image

The IGW40N60TP from Infineon Technologies is a IGBT with Gate Emitter Voltage -20 to 20 V, Saturated Collector Emitter Voltage 1.60 to 1.94 V, DC Collector Current 48 to 67 V, Peak Collector Current 48 to 67 A, Junction Temperature 175 Degree C. More details for IGW40N60TP can be seen below.

Product Specifications

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Product Details

  • Part Number
    IGW40N60TP
  • Manufacturer
    Infineon Technologies
  • Description
    600 V ,Single Switch IGBT Module

General

  • Types
    Single Switch IGBT
  • No. of Transistors
    Single
  • Gate Emitter Voltage
    -20 to 20 V
  • Saturated Collector Emitter Voltage
    1.60 to 1.94 V
  • DC Collector Current
    48 to 67 V
  • Peak Collector Current
    48 to 67 A
  • Junction Temperature
    175 Degree C
  • Gate Emitter Leakage Current
    0.1 uA
  • Operating Temperature
    -40 to 175 Degree C
  • Collector Emitter Voltage
    600 V
  • Power Dissipation
    123 to 246 W
  • Package
    TO-247
  • Package Type
    Through Hole
  • Applications
    Drives, solar inverters, uninterruptible power supplies, converters with medium switching frequency
  • RoHS Compliant
    Yes

Technical Documents
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